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Charge Injection from Excited Cs2AgBiBr6 Quantum Dots into Semiconductor Oxides

机译:将激发的 Cs2AgBiBr6 量子点电荷注入半导体氧化物

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摘要

Lead-free double perovskites such as Cs2AgBiBr6 are gaining attention because of their environmental friendliness compared to the lead halide perovskites. In order to establish their photoactivity, we have probed the excited-state behavior of Cs2AgBiBr6 nanocrystals and charge injection from their excited state into different metal oxides (TiO2, ZnO). The electron-transfer rate constants determined from ultrafast transient absorption spectroscopy were in the range of 1.2-5.2 x 10(10) s(-1). Under steady-state photolysis (ambient conditions), the electrons injected into TiO2 are scavenged by atmospheric oxygen, leaving behind holes which accumulate within the quantum dots (QDs). These accumulated holes further induce oxidation of QDs, resulting in the overall photodegradation of perovskite films. Annealed films of Cs2AgBiBr6 nanocrystals,
机译:与卤化铅钙钛矿相比,Cs2AgBiBr6 等无铅双钙钛矿因其对环境友好而受到关注。为了确定其光活性,我们研究了Cs2AgBiBr6纳米晶体的激发态行为,以及从激发态注入到不同金属氧化物(TiO2,ZnO)中的电荷。超快瞬态吸收光谱测定的电子转移速率常数在1.2-5.2 x 10(10) s(-1)范围内。在稳态光解(环境条件)下,注入TiO2的电子被大气中的氧气清除,留下在量子点(QD)内积聚的空穴。这些累积的空穴进一步诱导量子点的氧化,导致钙钛矿薄膜的整体光降解。Cs2AgBiBr6纳米晶退火膜,

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