Large-area multicolor laser arrays on the nano- to microscale are key components for the development of on-chip nanophotonics and next-generation color display technology, which remain a formidable task owing to the material lattice mismatch and low-resolution patterning techniques. Here, we demonstrated multicolor-amplified spontaneous emission (ASE) arrays on single-chip integration by patterning CsPbX_(3) (X = Cl, Br, and I) quantum dot films through a rapid vapor-phase halide ion exchange strategy. Stoichiometrically tunable ASEs were achieved across the whole visible spectral range with similar low thresholds. When the multicolor ASE arrays were further miniaturized to microscale, a spatial definition of 12.5 μm could be achieved, corresponding to an image resolution of up to 2030 pixel per inch.
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