机译:Improving Charge Carrier Transport Properties in AlGaN Deep Ultraviolet Light Emitters Using Al-Content Engineered Superlattice Electron Blocking Layer
McGill University;
AlGaN; electron blocking layer; superlattice; hole injection; hot hole; optical confinement; Light emitting diodes; Wide band gap semiconductors; Aluminum gallium nitride; Charge carrier processes; Electric potential; Metals; Hot carriers;