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Comparison of Harmonic Generation from Crystalline and Amorphous Gallium Phosphide Nanofilms

机译:晶体和非晶磷化镓纳米薄膜产生的谐波比较

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摘要

Gallium phosphide (GaP) is a promising material for nanophotonics, given itslarge refractive index and a transparency over most of the visible spectrum.However, since easy phase-matching is not possible with bulk GaP, acomprehensive study of its nonlinear optical properties for harmonicgeneration, especially when grown as thin films, is still missing. Here, secondharmonic generation is studied from epitaxially grown GaP thin films,demonstrating that the absolute conversion efficiencies are comparable to abulk wafer over the pump wavelength range from 1060 to 1370 nm.Furthermore, the results are compared to nonlinear simulations, and thesecond order nonlinear susceptibility is extracted, showing a similardispersion and magnitude to that of the bulk material. Furthermore, the thirdorder nonlinear susceptibility of amorphous GaP thin films is extracted fromthird harmonic generation to be more than one order of magnitude largerthan that of the crystalline material, and generation of up to the fifth harmonicis reported. The results show the potential of crystalline and amorphous thinfilms for nonlinear optics with nanoantennas and metasurfaces, particularly inthe visible to near infrared part of the spectrum.
机译:磷化镓(GaP)是一种很有前途的纳米光子学材料,因为它具有大折射率和在大部分可见光谱上的透明度。然而,由于体GaP无法轻松进行相位匹配,因此仍然缺乏对其谐波产生的非线性光学特性的全面研究,特别是当生长为薄膜时。本文研究了外延生长GaP薄膜的二次谐波产生,结果表明,在1060-1370 nm的泵浦波长范围内,其绝对转换效率与块状晶圆相当。此外,将结果与非线性模拟结果进行了比较,并提取了与块体材料相似的色散和大小。此外,从三次谐波产生中提取出的非晶态GaP薄膜的三阶非线性磁化率比晶体材料大一个数量级以上,并报告了高达五次谐波的产生。结果表明,晶体和非晶薄膜在具有纳米天线和超表面的非线性光学器件中具有潜力,特别是在光谱的可见光到近红外部分。

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