Electronic characterization of plasma-thick n-type silicon using neural networks and photoacoustic response

摘要

In this paper, electronic semiconductor characterization using reverse-back procedure was applied to different photoacoustic responses aiming to find effective ambipolar diffusion coefficient and a bulk lifetime of the minority carriers. The main idea was to find the small fluctuations in investigated parameters due to detecting possible unwanted sample contaminations and temperature variations during the measurements. The mentioned procedure was based on the application of neural networks. Knowing that in experiments the contaminated surfaces of the sample can play a significant role in the global recombination process that we are measuring and that the unintentionally introduced defects of the sample crystal lattice could vary the carrier lifetime by several orders of magnitude, a method of PA signal adjustment by the reverse-back procedure is developed, based on the changes of the carrier electronic parameters.