Admittance spectroscopy up to 67 GHz in InGaAs/InAlAs triple-barrier resonant tunneling diodes

摘要

S-parameters of InGaAs/InAlAs triple-barrier resonanttunneling diodes (TBRTDs) were measured up to 67 GHz with variousmesa areas and various bias voltages. Admittance data of bare TBRTDs aredeembedded and evaluated by getting rid of parasitic components with helpof electromagnetic simulations for particular fabricated device structures.Admittance spectroscopy up to 67 GHz is applied for bare TBRTDs forthe first time and a Kramers-Kronig relation with Lorentzian function isfound to be a consistent model for the admittance especially in cases of lowbias conditions. Relaxation time included in the Lorentzian function aretentatively evaluated as the order of several pico second.