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Anomalous stability of non-van der Waals bonded B4C nanosheets through surface reconstruction

机译:非范德华键合B4C纳米片表面重建的异常稳定性

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摘要

Boron carbide (B4C) has been well studied both theoretically and experimentally in its bulk form due to its exceptional hardness and use as a high-temperature thermoelectric. However, the properties of its two-dimensional nanosheets are not well established. In this paper, using van der Waals-corrected density-functional theory simulations, we show that bulk B4C can be cleaved along different directions to form B4C nanosheets with low formation energies. We find that there is minimal dependence of formation energies on cleavage planes and surface terminations, even though the bulk is not van der Waals layered. This anomalous stability of B4C nanosheets is found to be a result of surface reconstructions that are unique to B-rich systems. While the density of states of the bulk B4C indicate that it is a semiconductor, the B4C nanosheets are found to be predominantly metallic. We attribute this metallic behavior to a redistribution of charges on the surface bonds of the films. The Seebeck coefficients of the B4C films remain comparable to those of the bulk and are nearly constant as a function of temperature. Our results provide guidance for experimental synthesis efforts and future application of B4C nanosheets in nanoelectronic and thermoelectric applications. Published under an exclusive license by AIP Publishing.
机译:碳化硼 (B4C) 因其出色的硬度和用作高温热电材料而在其本体形式上得到了充分的理论和实验研究。然而,其二维纳米片的性质尚未得到很好的证实。本文利用范德华校正的密度泛函理论模拟,表明块状B4C可以沿不同方向裂解,形成低形成能的B4C纳米片。我们发现,即使主体不是范德华层状的,地层能量对解理面和表面终止的依赖性也很小。B4C纳米片的这种异常稳定性被发现是富B系统特有的表面重建的结果。虽然块状B4C的状态密度表明它是一种半导体,但发现B4C纳米片主要是金属的。我们将这种金属行为归因于薄膜表面键上电荷的重新分布。B4C薄膜的塞贝克系数与本体薄膜的塞贝克系数相当,并且作为温度的函数几乎是恒定的。研究结果为B4C纳米片的实验合成工作和未来在纳米电子和热电领域的应用提供了指导。在 AIP Publishing 的独家许可下发布。

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