The rectification effect is a fundamental physical property of heterojunctions, which has wide applications in microelectronic and spintronic devices. Here we report a spin Hall rectification effect (SHRE) in heavy-metal/ ferromagnetic metal (FM) bilayers under current-in-plane geometry, in which a pure sinusoidal alternating current along the current channel of Hall bar can generate a longitudinal rectification direct-current voltage. The rectification mechanism stems from spin Hall effect of heavy metals as well as spin-dependent asymmetric scattering associated with current polarity. Experimental results show that SHRE couples with magnetic infor-mation, and thus is non-volatile and controllable depending on the magnetization direction of FM layer, which opens up a new avenue for spintronics diode engineering based on SHRE.
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