MFSFET with 5 nm thick ferroelectric nondoped HfO_2 gate insulator utilizing low power sputtering for Pt gate electrode deposition

摘要

In this research, we investigated the metal-ferroelectricsemiconductorfield-effect transistors (MFSFETs) with 5 nm thicknondoped HfO2 gate insulator by decreasing the sputtering power for Ptgate electrode deposition. The leakage current was effectively reduced to2.6×10~（-8） A/cm~2 at the voltage of -1.5 V by the sputtering power of 40 W forPt electrode deposition. Furthermore, the memory window (MW) of 0.53 Vand retention time over 10 years were realized.