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METHODS OF METROLOGY RELATED TO OVERLAY

机译:METHODS OF METROLOGY RELATED TO OVERLAY

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The present invention relates (o control apparatus and control methods usable, for example, to maintain performance in the manufacture of devices by patterning processes such as lithography. The invention further relates to methods of manufacturing devices using lithographic techniques. The invention yet further relates to computer program products for use in implementing such methods. Related Art A lithographic process is one in which a lithographic apparatus applies a desired pattern onto a substrate, usually onto a target portion of the substrate, after which various processing chemical and/or physical processing steps work through the pattern to create functional features of a complex product. The accurate placement of patterns on the substrate is a chief challenge for reducing the size of circuit components and other products that may be produced by lithography. In particular, the challenge of measuring accurately the features on a substrate which have already been laid down is a critical step in being able to position successive layers of features in superposition accurately enough to produce working devices with a high yield. So-called overlay should, in general, be achieved within a few tens of nanometers in loday's sub-micron semiconductor devices, down to a few nanometers in the most critical layers.

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  • 来源
    《Research Disclosure》 |2023年第712期|949-950|共2页
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  • 正文语种 英语
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  • 入库时间 2024-01-25 00:49:51
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