首页> 外文期刊>IEEE journal of selected topics in quantum electronics: A publication of the IEEE Lasers and Electro-optics Society >Theoretical Demonstration of 250 Gb/s Ultrafast All-Optical Memory Using Mach-Zehnder Interferometers With Quantum-Dot Semiconductor Optical Amplifiers
【24h】

Theoretical Demonstration of 250 Gb/s Ultrafast All-Optical Memory Using Mach-Zehnder Interferometers With Quantum-Dot Semiconductor Optical Amplifiers

机译:Theoretical Demonstration of 250 Gb/s Ultrafast All-Optical Memory Using Mach-Zehnder Interferometers With Quantum-Dot Semiconductor Optical Amplifiers

获取原文
获取原文并翻译 | 示例
           

摘要

Ultrafast all-optical memory at 250 Gb/s using Mach-Zehnder interferometers (MZIs) with symmetrical quantum-dot semiconductor optical amplifiers (QDSOAs), acting as all-optical AND gate and regenerator in a loop configuration, is theoretically demonstrated for 500 loop circulations using a return-to-zero modulated format. The memory operation is examined and evaluated by the quality factor (&italic&QF&/italic&), which is a more sensitive method of measuring memory quality. The obtained numerical results show that the proposed memory can be operated up to 250 Gb/s for 500 circulations with high &italic&QF&/italic&.

著录项

获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号