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Influence of strain and external electric field on the performance of PC6/MoSe2 heterostructure

机译:应变和外电场对PC6/MoSe2异质结性能的影响

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摘要

In this work, the structural, electronic and optical performances of PC6/MoSe2 heterostructure are investigated using first principles calculations based on density functional theory. The PC6/MoSe2 heterostructure displays type-I band alignment with a direct band gap of 0.84 eV, and its CBM and VBM are contributed by PC6. The heterojunction can be transformed from type-I to type-II under biaxial strain, even from semiconductor to metal in the presence of a strong strain within the range of elastic response. Meanwhile, the transition from type-I to type-II can be also observed when an electric field greater than 0.3 V/angstrom is applied. So the electronic properties of the PC6/MoSe2 heterostructure can be effectively modulated by applying biaxial strain and external electric field, which provides great potential for designing multifunctional devices. In addition, the optical absorption spectrum reveals that the PC6/MoSe2 heterostructure could present a good optical utilization performance, indicating that it may play an important role in the application of optoelectronic devices. The results suggest that the PC6/MoSe2 heterostructure can be widely used in optoelectronic, photocatalytic and light-emitting applications in future research.
机译:本文采用基于密度泛函理论的第一性原理计算方法研究了PC6/MoSe2异质结的结构、电子和光学性能.PC6/MoSe2异质结表现出I型带对齐,直接带隙为0.84 eV,其CBM和VBM均由PC6贡献。异质结在双轴应变下可以从I型转变为II型,甚至在弹性响应范围内存在强应变的情况下从半导体转变为金属。同时,当施加大于0.3 V/埃的电场时,也可以观察到从I型到II型的转变。因此,通过施加双轴应变和外电场可以有效地调控PC6/MoSe2异质结的电子性质,这为设计多功能器件提供了巨大的潜力。此外,光吸收光谱表明PC6/MoSe2异质结具有良好的光利用性能,表明其在光电子器件应用中可能发挥重要作用。结果表明,PC6/MoSe2异质结在未来的研究中可广泛应用于光电、光催化和发光领域。

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