High-mobility p-type Li_xCu_yO films prepared by plasma-enhanced atomic layer deposition and low-temperature annealing

摘要

High-mobility, p-type LixCuyO films are prepared by co-dosed plasma-enhanced atomic layer deposition. The Xray diffraction patterns show that in addition to the CuO and Cu2O phases, the formed LiCu3O3 is responsible for the high mobility. The 350 degrees C-annealed LixCuyO film has transmittance of 85 at mid-long wavelengths and bandgap of 2.4 eV. A hole mobility of 88 cm2 V-1 s-1 is reached, significantly higher than that of common p-type metal oxides.