首页> 外文期刊>ECS Journal of Solid State Science and Technology >Ab Initio Study of Electronic Properties on WS2 Monolayer and Transition Metal Doped WS2
【24h】

Ab Initio Study of Electronic Properties on WS2 Monolayer and Transition Metal Doped WS2

机译:WS2单层和过渡金属掺杂WS2的电子性能从头研究

获取原文
获取原文并翻译 | 示例
获取外文期刊封面目录资料

摘要

Two-dimensional materials have attracted the attention of many researchers. Especially transition metal dichalcogenides (TMDs) like MoS2, WS2, etc., grants a wide scale of the band gap. TMDCs, MoS2 and WS2 monolayers have similar electronic and structural properties. WS2 has a great surface to volume ratio, a wide band gap range, high thermal and oxidative stability. It also has the peak carrier mobility and least effective mass than other TMDCs. So, it has been used in many applications like solar cells, LED, rechargeable batteries and sensors. In this work, we have analysed the stability and the electronic properties of monolayer and doped WS2 with Cobalt (Co), Iron (Fe) and Nickel (Ni) using density functional theory (DFT). The stability of the system has been studied by the formation energy. The electronic properties are analysed by band structure, the density of states, charge transfer, chemical potential, and total energy of the systems. These results show that the formation energy of the doped system is increasing with a negative magnitude which proves that the doped structures are more stable. We have observed reasonable changes in the band structure and density of states for transition metal doped WS2 while comparing with WS2 monolayer. We concluded that the doped WS2 shows better results than monolayer WS2 in the stability and improved electronic properties. These results may provide a prospective insight for making gas sensing devices.
机译:二维材料引起了许多研究人员的关注。特别是过渡金属硫族化合物(TMD),如MoS2、WS2等,具有较宽的带隙。TMDC、MoS2 和 WS2 单层具有相似的电子和结构特性。WS2 具有出色的表面积与体积比、宽带隙范围、高热稳定性和氧化稳定性。与其他TMDC相比,它还具有峰值载流子迁移率和最低有效质量数。因此,它已被用于许多应用,如太阳能电池、LED、可充电电池和传感器。本文采用密度泛函理论(DFT)分析了钴(Co)、铁(Fe)和镍(Ni)掺杂WS2的稳定性和电子性质.通过地层能研究了系统的稳定性。通过能带结构、态密度、电荷转移、化学势和系统的总能量来分析电子性质。这些结果表明,掺杂体系的形成能以负幅度增加,证明掺杂结构更加稳定。与WS2单层相比,我们观察到过渡金属掺杂WS2的能带结构和态密度发生了合理的变化。结果表明,掺杂的WS2在稳定性和电子性能方面比单层WS2更好。这些结果可为气体传感器件的制备提供前瞻性的见解。

著录项

获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号