Bismuth-Activated Persistent Phosphors

摘要

Bismuth cations (e.g., Bi~(3+), Bi~(2+)) are very promising non-rare-earth activatorsin persistent luminescence (PersL) materials. Recently, much workhas been devoted to modulating the host structures and defects to obtainhigh-intensity luminescence and/or tunable excitation and emission bands ofBi-activated persistent phosphors. A timely review on Bi-based PersL phosphorswould be highly attractive for future materials’ design and applications.The present review discusses the recent advances in Bi-activated PersLphosphors with focus on the structure–defect–property relationships. Firstly,the basic ionic configurations of Bi cations as an activator are discussed indetail, followed by the classification as well as elaboration of Bi-activatedPersL phosphors according to emission wavelength. Then, the modulationstrategies of PersL through adjusting the local structures are highlighted,which include defect engineering and theoretical prediction. These strategiesallow for the effective regulation of PersL in Bi-activated phosphors thathave extensively been explored in information storage, X-ray imaging, stresssensing, anti-counterfeiting, etc. Finally, future challenges and perspectivestoward Bi-activated PersL phosphors are proposed. This review provides solidguidelines of designing diverse PersL materials with tunable properties forvarious optical applications in the future.