The BST/Si photodiode has been effectively synthesized by growth BST on the p-type Si (100) substrate utilizing the hydrothermal process. Screen printing was used to prepare TiO2 film deposited on Si substrate, then immersing TiO2 film in Ba(OH)(2) and Sr(OH)(2) solution to fabricate BST/Si photodiode using a hydrothermal process. The BST film was studied using XRD, FESEM, and reflection spectra. The band gap was calculated for a BT film using the reflection methods. Hall measurement confirmed the n-type conductivity of BST film. Curie temperature of the BST film was observed at 87 degrees C according to DC measurement. The dark and illuminated (J-V) characteristics of the BST/Si photodiode have been measured under simulated AM1 conditions using a Xenon lamp. The Shockley-Read- Hall recombination caused unequal electron and hole capture rates that dominated the I-V characteristics resulting in an absence of classic superposition phenomena. The open circuit voltage (V-oc) measurement is carried out to know the recombination mechanism in an open circuit. The BST/Si film showed more conductivity after increasing illuminating power density, which qualifies it for photovoltaic applications.
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