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Steady-state and dynamic characteristics of deep UV luminescence in rock salt-structured MgxZn1−xO

机译:岩盐结构MgxZn1−xO深紫外发光的稳态和动态特性

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摘要

Temperature-dependent cathodoluminescence spectra were measured for rock salt-structured MgxZn1−xO films with x = 0.95–0.61. The Mg0.95Zn0.05O film exhibited the shortest deep UV peak wavelength of 199 nm (6.24 eV) at 6 K. Relatively high equivalent internal quantum efficiencies of 0.9–11 were obtained. The Tauc plots, which were obtained from temperature-dependent optical transmittance measurements, exhibited large Stokes-like shifts of 0.7–0.9 eV at 6–300 K. Time-resolved photoluminescence (PL) signals at 7 K exhibited fast and slow decay components. The fast decay component had PL lifetimes of 2.59–3.08 ns, and the slow decay component far exceeded the measurement time range of 12.5 ns. The fast decay constant reflected the transfer lifetime of the photoexcited carriers to certain trapping centers. These centers were tentatively ascribed to Zn-related isoelectronic trapped-hole centers and may be a cause of the large Stokes-like shifts. The signals at 300 K exhibited very short PL lifetimes of 120–180 ps. The PL lifetimes were mainly attributed to the nonradiative recombination lifetime. Simultaneous decreases in the Zn-related isoelectronic trapped-hole centers and the nonradiative recombination centers were found to be necessary to improve the DUV emission properties of RS-MgxZn1−xO films.
机译:测量岩盐结构的MgxZn1−xO薄膜的温度依赖性阴极发光光谱,x = 0.95–0.61。Mg0.95Zn0.05O薄膜在6 K下表现出最短的深紫外峰波长,为199 nm(6.24 eV),获得了0.9%–11%的相对较高的等效内量子效率。从温度相关的透射率测量中获得的Tauc图在6-300 K时表现出0.7-0.9 eV的大斯托克斯样位移。快速衰减分量的PL寿命为2.59–3.08 ns,慢衰减分量的PL寿命远远超过12.5 ns的测量时间范围。快速衰减常数反映了光激发载流子向某些捕获中心的转移寿命。这些中心被暂时归因于与Zn相关的等电子陷孔中心,可能是大的斯托克斯样位移的原因。300 K时的信号表现出非常短的PL寿命,为120–180 ps。PL寿命主要归因于非辐射复合寿命。研究发现,Zn相关等电子阱中心和非辐射复合中心同时降低是改善RS-MgxZn1−xO薄膜DUV发射特性的必要条件。

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