Graphene/Quantum Dot Heterostructure Photodetectors: From Material to Performance

摘要

Owing to its high carrier mobility, electrical conductivity, and thermal/chemicalstability, graphene is an ideal candidate material for photodetection. However,the weak light absorption of graphene significantly limits its practical applicationsin photodetectors. Quantum dots, with strong light-absorption capacityand well-adjustable band gap, are widely hybridized with graphene to realizewide-range and intense light absorption for effective photodetection. A detailedliterature review on graphene/quantum dot heterostructure photodetectorsis in urgent need to clearly point out the fundamentals, material synthesismethods, and performance engineering strategies. Here, first, the significanceof graphene/quantum dot heterostructure photodetectors, from the mechanismto performance indicators, is systematically discussed. Second, differentsynthesis methodologies for the graphene/quantum dot heterostructure areoverviewed. Additionally, the engineering strategies, including surface treatment,chemical doping, and size modification, to tune the photoelectric performanceare critically commented. Finally, challenges and outlook for the development ofgraphene/quantum dot heterostructure photodetectors are pointed out.