The present invention provides a suitable architecture to enable the desired electron-optical performance at higher potential differences. According to an aspect of the invention, there is provided an electron-optical device for manipulating electron beamlets, the device comprising an array substrate i n which an array of apertures is defined for the path of electron beamtets, the substrate having a thickness which is stepped so that the array substrate is thinner in the region corresponding to the array of apertures than another region of the array substrate; and an adjoining substrate in which another array of apertures is defined for the path of the electron beamlets; wherein the electron-optical device is configured to provide a potential difference between the substrates. Advantages of the present invention will become apparent from the following description taken in conjunction with the accompanying drawings wherein are set forth, by way of illustration and example, certain embodiments of the present invention.
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