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机译:A Highly Linear GaN MMIC Doherty Power Amplifier Based on Phase Mismatch Induced AM-PM Compensation
Tsinghua Univ;
ZTE Corp;
Univ Calgary;
Transistors; Optimized production technology; Impedance; Gallium nitride; Voltage; Topology; Peak to average power ratio; Amplitude-to-phase (AM-PM); Doherty power amplifier (DPA); gallium nitride (GaN); highly linear; monolithic microwave integrated circuit (MMIC); phase mismatch; HIGH-EFFICIENCY; DESIGN APPROACH; BAND; RF; DISTORTION; PREDISTORTION; MODULATION; PAS;