Non-Reciprocal Sub-Micron Waveguide Raman Amplifiers, Towards Loss-Less Silicon Photonics

摘要

Optical amplification in silicon photonic integrated circuits remains a challenge and stimulated Raman scattering has been proposed as a means of achieving optical gain in silicon. In this work, we experimentally investigate silicon Raman amplifiers optimized for fabrication with open-access foundry sub-micron silicon platform. We discuss and experimentally validate the importance of considering the non-reciprocal Raman-gain by using counter-propagating or co-propagating pumps and probes, different amplifier lengths, input pump powers and nonlinear loss values. We demonstrate a Raman-assisted loss-less optical circuit in a 1.2-cm-length waveguide that reaches zero net-gain with only 60 mW continuous-wave pumping. A 5.5 dB stimulated Raman scattering (SRS) gain yielding 0.5 dB net-gain is also demonstrated with a 115 mW pump in a 3.25-cm waveguide. Furthermore, we examine the nonlinear loss of silicon waveguides to estimate free carrier lifetime (FCL) with different bias voltages applied to the waveguide p-i-n structure. Accounting for non-reciprocal Raman amplification by using the two dataset of co- and counter-propagating SRS gain, we extract the Raman gain coefficient of this 220 nm thick silicon photonic waveguide. We perform the curve fitting over the whole input pump power range using the extracted FCL, and over the low power range where only linear loss is expected. We find a good agreement in the extracted Raman gain coefficients. We use these key parameters as input to a silicon photonic Raman amplifier model to find the optimum performance based on the available footprint and pump power.