机译:GaN-Based Deep-Nano Structures: Break the Efficiency Bottleneck of Conventional Nanoscale Optoelectronics
Univ Michigan, Dept Elect Engn & Comp Sci, 1301 Beal Ave, Ann Arbor, MI 48109 USA;
Univ Michigan, Dept Mat Sci & Engn, 2300 Hayward St, Ann Arbor, MI 48109 USA;
excitons; light emitting devices; nanostructures; semiconductors; surface recombination;