AlGaN/GaN-Based Optoelectronic Synaptic Devices for Neuromorphic Computing

摘要

Neuromorphic computing promises to overcome the Von Neumann bottleneckof traditional computers. Optoelectronic synaptic devices are greatlydesired given their potential applications in neuromorphic computing. In thiswork, optoelectronic synaptic devices with long-term memory are fabricated.The devices are based on a GaN/AlGaN/AlN/GaN heterojunction and a SiN_xcharge trapping layer. Synaptic functionalities including excitatory postsynapticcurrent, paired pulse facilitation, and transition from short-termmemory to long-term memory are realized. The retention time of long-termmemory may be more than 10 years, demonstrating the reliable chargestorage of the devices. Logic functions are also realized by synergizing thephotogating and electrical gating of the devices. The responsivity and specificdetectivity are 2.64 × 10~5 A W?1 and 1.79 × 10~(16) Jones at the optical powerdensity of 1.4 mW cm~(?2), respectively. In addition, the devices have a reconfigurableswitch of 1000 cycles with working temperature up to 200 ℃.