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Exfoliating silica bilayers via intercalation at the silica/transition metal interface

机译:通过在二氧化硅/过渡金属界面处插层剥离二氧化硅双层

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摘要

The growth of the silica (SiO2) bilayer (BL) films on transition metal (TM) surfaces creates a new class of two-dimensional (2D) crystalline, self-contained materials that interact weakly with the TM substrate. The BL-silica/TM heterojunction has shown unique physical and chemical properties that can lead to new chemical reaction mechanisms under the sub-nm confinement and broad potential applications ranging from surface protection, nano transistors, molecular sieves to nuclear waste removal. Novel applications of BL-silica can be further explored as a constituent of van der Waals assembly of 2D materials. Key to these applications is an unmet technical challenge to exfoliate and transfer BL-silica films in a large area from one substrate to another without material damage. In this study, we propose a new exfoliation mechanism based on gas molecule intercalation from density functional theory studies of the BL-silica/TM heterojunction. We found that the intercalation of O atoms and CO molecules at the BL-silica/TM interface weakens the BL-silica-TM hybridization, which results in an exponential decrease of the exfoliation energy against the interface distance as the coverage of interfacial species increases. This new intercalation mechanism opens up the opportunity for non-damaging exfoliation and transfer of large area silica bilayers.
机译:二氧化硅 (SiO2) 双层 (BL) 薄膜在过渡金属 (TM) 表面上的生长产生了一类新的二维 (2D) 结晶、自含材料,这些材料与 TM 基材的相互作用较弱。BL-二氧化硅/TM异质结具有独特的物理和化学性质,可以在亚纳米限制下产生新的化学反应机理,并具有广泛的潜在应用,包括表面保护、纳米晶体管、分子筛和核废料清除。BL-二氧化硅作为二维材料范德华组装的成分可以进一步探索新的应用。这些应用的关键是一个未解决的技术挑战,即在不损坏材料的情况下将BL二氧化硅薄膜从一种基材大面积剥离和转移到另一种基材。在这项研究中,我们提出了一种新的基于BL-二氧化硅/TM异质结密度泛函理论研究的气体分子插层的剥离机理。我们发现,O原子和CO分子在BL-二氧化硅/TM界面的插层削弱了BL-二氧化硅-TM的杂化作用,随着界面物质覆盖率的增加,剥离能随界面距离呈指数下降。这种新的插层机制为大面积二氧化硅双层的无损伤剥离和转移开辟了机会。

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