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机译:Highly-packed self-assembled graphene oxide film-integrated resistive random-access memory on a silicon substrate for neuromorphic application
Univ Seoul;
Pusan Natl Univ;
Samsung Elect Co LtdSeoul Natl Univ;
graphene oxide; resistive random-access memory; synaptic device; neuromorphic system; PHASE-CHANGE MEMORY; SWITCHING CHARACTERISTICS; THIN-FILMS; MECHANISM; NETWORK; DEVICE; SIMULATION; RESISTANCE; SYNAPSE; LAYER;