2D Bi_2O_2Te Semiconductor with Single-Crystal Native Oxide Layer

摘要

Following logic in the silicon semiconductor industry, the existence of nativeoxide and suitable fabrication technology is essential for 2D semiconductorsin planar integronics, which are surface-sensitive to typical coating technologies.To date, very few types of integronics are found to possess this feature.Herein, the 2D Bi_2O_2Te developed recently is reported to possess large-areasynthesis and controllable thermal oxidation behavior toward single-crystalnative oxides. This shows that surface-adsorbed oxygen atoms are inclinedto penetrate across Bi_2O_2_n~(2n+) layers and bond with the underlying Te_n~(2n?) atelevated temperatures, transforming directly into TeO_4_n~(2n?) with the basicarchitecture remaining stable. The oxide can be adjusted to form in anaccurate layer-by-layer manner with a low-stress sharp interface. The nativeoxide Bi_2TeO_6 layer (bandgap of ≈2.9 eV) exhibits visible-light transparencyand is compatible with wet-chemical selective etching technology. Theseadvances demonstrate the potential of Bi_2O_2Te in planar-integrated functionalnanoelectronics such as tunnel junction devices, field-effect transistors, andmemristors.