Fluence effect on photo- and electroluminescence of silica layers implanted with Sn~+ ions

摘要

High-fluence ion implantation has been applied to create silica-based light-emitting nanocomposite for silicon photonics. Samples of SiO2/Si have been implanted with Sn ions (80 keV, 2.5 x 10(16) cm(-2), 5 x 10(16) cm(-2) and 1 x 10(17) ion/cm(2)) and afterwards annealed at 900 degrees C for 60 min in air ambient. The intense violet band at 3.2 eV dominates in photoluminescence (PL) end electroluminescence (EL) spectra. Its intensity decreases with the Sn concentration increase in silica. Besides, the PL spectra exhibit orange band which quenches after passing a charge flow (0.35C/cm(2)) through the samples. The origin of the observed emission as well as its degradation mechanisms are discussed.