Elementary processes of organic epitaxial growth studied by pulsed molecular beam technique

摘要

We are studying elementary processes of organic epitaxial growth by using pulsed molecular beam technique. First, hydrogen phthalocyanine beam was irradiated onto various inorganic surfaces and the time profile of desorbing molecules were measured. The surface residence time was found to be as long as seconds. Arrhenius type plots were well fit by lines, from which characteristic energies of molecule-surface interaction were determined. Second, thin film growth by pulsed molecular beam of quinacridone was studied using atomic force microscopy. Observed minimum in the nucleation density as a function of pulse width was explained by a model assuming desorption induced by intermolecular collision on the surface.