Understanding of carriers’ kinetic energy in steep-slope P+N+P+N+ feedback field effect transistor

摘要

Abstract A feedback field-effect transistor takes advantage of the charges accumulated in its potential well and the restriction of carrier flow by its internal potential barrier to achieve superior electrical properties such as a subthreshold swing, threshold voltage, transconductance, and on/off current ratio. However, the device must deal with the modulation of non-uniformity under forward/reverse bias and with completely losing carrier flow control during reverse bias below a certain channel length. In this work, we address these significant issues by focusing on the width of the source/drain and demonstrate the operation of positive feedback in n-type metal oxide semiconductor field-effect transistor (nMOSFET) using only one additional step, resulting in a superior subthreshold swing (～3 mV/decade at 300 K), a low threshold voltage (～0.26 V), hysteresis window (0.018 V), and clear saturation region.