Research Disclosure

摘要

This disclosure relates to a lithography apparatus, in particular for use in extreme ultraviolet (EUV) lithography. More particularly, the present disclosure relates to attenuating an EUV radiation beam to prevent the printing of unwanted edge-of-field images when performing EUV lithography using a low-n reticle. Figure 1 illustrates a lithographic system comprising a radiation source SO and a lithographic apparatus LA. The radiation source SO is configured to generate an EUV radiation beam B and to supply the EUV radiation beam B to the lithographic apparatus LA. The lithographic apparatus LA comprises an illumination system IL, a support structure MT configured to support a patterning device MA (e.g., a reticle), a projection system PS, and a substrate table WT configured to support a substrate W. It will be understood that the term "reticle", "mask", or "patterning device" as used herein may refer to a device that can be used to endow an incoming radiation beam with a patterned cross-section, corresponding to a pattern that is to be created in a target portion of the substrate.