机译:使用 (NtBu)2(NMe2)2Mo、过氧化氢 (H2O2) 和臭氧 (O3) 对氧化钼进行原子层沉积,用于 DRAM 应用
Division of Materials Science and Engineering Hanyang University;
Semiconductor Research and Development Center Samsung Electronics Company;
ALD oxidant; Conductivity; DRAM; MoOx; Step coverage; Work function;