DEPOSITION OF PtxIr(1-x) FILM STRUCTURES BY MOCVD FROM A COMBINATION OF PRECURSORS Me3Pt(acac)Py AND Ir(CO)(2)(acac)

摘要

MOCVD processes of the deposition of PtxIr(1-x) films in the presence of H-2 and O-2 in the temperature range 260-300 degrees C on Si and Ti substrates using a combination of precursors Me3Pt(acac)Py and Ir(CO)(2)(acac) (acac = acetylacetonato(-), Py = pyridine) are studied. According to the powder XRD data, the films are usually solid solutions with the PtxIr(1-x) composition. The samples prepared in the presence of O-2 show the minimal contents of impurities, homogeneous composition, and the Pt:Ir ratio close to the one experimentally specified. In the presence of H-2, Ir-enriched PtxIr(1-x) layers with a non-uniform distribution of metals over the thickness are formed in the temperature range 280-300 degrees C. The surface of PtxIr(1-x) film structures prepared in the presence of hydrogen is formed by small (up to 10 nm in size) particles or 20-32 nm large particle agglomerates prepared in the presence of oxygen. The PtxIr(1-x) layers have a predominantly columnar structure. The structure of films deposited in an oxygen atmosphere is less dense than that of the layers synthesized under similar conditions in a hydrogen atmosphere. The thickness of the films prepared in H-2 or O-2 falls within intervals 300-450 nm and 750-800 nm, respectively.