Thermally stable and flexible substrate for high-performance organic field-effect transistors

摘要

Flexible substrates are susceptible to deformation above 180 degrees C. This is not favorable for the fabrication of highperformance organic field-effect transistors, as most of organic semiconducting films need thermal annealing above 200 degrees C. In this study, flexible willow glass was applied as substrate, which showed no deformation even at 500 degrees C. Herein, pentacene transistors were fabricated on willow glass with high hole mobility of 1.02 cm2 V-1 s- 1. Compared to the commonly used poly(ethylene terephthalate) (PET) substrate, the willow glass exhibited higher hole mobility, better thermal stability, harder surface, and tolerable flexibility. The mobility decreased slightly under bending and recovered after the willow glass restored to its original state. The willow glass is speculated to be a good complement to the PET substrate, and shows great application prospects in the field of organic electronics.