The insulator (SiO{sub}2) layer fabricated by the surface sol-gel process on the ITO glass substrate. This process was monitored by Quartz Crystal Microbalance (QCM) Technique and the growth of the insulating layer was confirmed by X-ray Photoelectron Spectroscopy (XPS) Light emission layer was fabricated by spincast technique on the ITO substrate covered by insulator layer. Ca and Al were fabricated by vacuum deposition as cathode and capping layer respectively. The external quantum efficiency of this ITO/SiO{sub}2/light emission layer/Ca/Al devise was superior to that of the ITO/light emission layer/Ca/Al devise.
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