Detailed investigations on the effect of temperature and RF power on the optoelectronic properties of gallium doped zinc oxide thin films suitable for transparent conducting electrode applications

摘要

Effect of substrate temperature and RF plasma power on the physical and optoelectronic properties of the RF magnetron sputtered GZO thin films is studied using suitable characterization techniques. 80% transmission is observed in the visible region and sheet resistance of the film observed to decrease from 2333.0 ohm/gamma to 17.4 ohm/gamma with increase in substrate temperature from room temperature to 250 degrees C at 100 W power. Increasing power to 140 W resulted in the film with lowest sheet resistance of 6.2 ohm/sheet and conductivity of 1.23x10(03) S/cm at 250 degrees C substrate temperature. The potential of GZO as TCE is evaluated using FOM calculations.