This study proposes a heterogeneous integration of preciseand approximate storage in data center storage. The storage controlengine allocates precise and error-tolerant applications to precise and approximatestorage, respectively. The appropriate use of both precise andapproximate storage is examined by applying a non-volatile memory capacityalgorithm. To respond to the changes in application over time,the non-volatile memory capacity algorithm changes capacity of storageclass memories (SCMs), namely the memory-type SCM (M-SCM) andstorage-type SCM (S-SCM), in non-volatile memory resource. A threedimensionaltriple-level cell (TLC) NAND flash is used as a large capacitymemory. The results indicate that precise storage exhibits a high performancewhen the maximum storage cost is high. By contrast, with a lowmaximum storage cost, approximate storage exhibits high performance usinga low bit cost approximate multiple-level cell (MLC) S-SCM.
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