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Sellotape Exfoliated Layered Quasi-2D Perovskite Thin Film for Efficient Light-Emitting Diodes

机译:用于高效发光二极管的Sellotape剥离层状准2D钙钛矿薄膜

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摘要

In 2004, K. S. Novoselov and A. K. Geim et al. have used sellotape topeel off the layered 2D graphite, and successfully obtained few-layerthin graphene. Inspired by this, herein, the sellotape is initially usedto exfoliate the layered Ruddlesden–Popper (RP) quasi-2D perovskitefilm for efficient light-emitting diodes application. The top surface layerof quasi-2D perovskite film is mechanically peeled off by the sellotapewithout damaging the crystalline region below, which minimizes the poorconductivity issue of quasi-2D perovskite film owing to the decreaseddefect density. Moreover, the exfoliated quasi-2D film exhibits low chargetraps density and enhanced energy transfer from low-dimensional to highdimensionaldomains due to the elimination of surface defective layerand the recrystallization of quasi-2D perovskite crystal, leading to highphotoluminescencequantum yield (PLQY) up to 83.2. Subsequently, anefficient perovskite light-emitting diode based on the exfoliated quasi-2Dperovskite thin film is achieved with high current efficiency of 46.0 cd m~(?2)and excellent external quantum efficiency (EQE) up to 14.8.
机译:2004年,K.S.Novoselov和A.K.Geim等人利用sellotape剥离了层状二维石墨,并成功获得了几层薄石墨烯。受此启发,本文将 sellotape 最初用于剥离层状 Ruddlesden-Popper (RP) 准 2D 钙钛矿薄膜,以实现高效的发光二极管应用。准二维钙钛矿薄膜的顶面层被胶带机械剥离,而不会损坏下面的结晶区域,从而最大限度地减少了准二维钙钛矿薄膜由于缺陷密度降低而导致的导电性差的问题。此外,由于消除了表面缺陷层和准二维钙钛矿晶体的再结晶,剥离的准二维薄膜表现出低电荷阱密度和增强了从低维到高维的能量转移,导致光致发光量子产率(PLQY)高达83.2%。随后,基于剥离的准二维钙钛矿薄膜制备了高效的钙钛矿发光二极管,电流效率高达46.0 cd m~(?2),外量子效率(EQE)高达14.8%。

著录项

  • 来源
    《Advanced Optical Materials》 |2022年第18期|2200885.1-2200885.7|共7页
  • 作者单位

    Department of Materials Science and EngineeringShenzhen Engineering Research and Development Centerfor Flexible Solar CellsSouthern University of Science and TechnologyShenzhen 518055, China Materials Interfaces CenterShenzhen Institute of Advanced Techno;

    Department of Materials Science and EngineeringShenzhen Engineering Research and Development Centerfor Flexible Solar CellsSouthern University of Science and TechnologyShenzhen 518055, China;

    Academy for Advanced Interdisciplinary StudiesDepartment of Materials Science and EngineeringShenzhen Engineering Research and Development Centerfor Flexible Solar CellsSouthern University of Science and TechnologyShenzhen 518055, ChinaResearch Laboratory of Electronics and Department of MechanicalEngineeringMassachusetts Institute of TechnologyCambridge, MA 02139, USADepartment of PhysicsPukyong National UniversityBusan 48513, Republic of KoreaDepartment of Mechanical EngineeringSeoul National UniversitySeoul 08826, Republic of KoreaMaterials Interfaces CenterShenzhen Institute of Advanced TechnologyChinese Academy of SciencesShenzhen, Guangdong 518055, China;

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  • 原文格式 PDF
  • 正文语种 英语
  • 中图分类
  • 关键词

    conductivity; light-emitting diodes; quasi-2D perovskites; sellotape exfoliation; surface defects;

    机译:电导率;发光二极管;准二维钙钛矿;sellotape去角质;表面缺陷;
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