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Self-Intercalation Tunable Interlayer Exchange Coupling in a Synthetic van der Waals Antiferromagnet

机译:合成范德华反铁磁体中的自插层可调谐层间交换耦合

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摘要

One of the most promising avenues in 2D materials research is the synthesis of antiferromagnets employing 2D van der Waals (vdW) magnets. However, it has proven challenging, due in part to the complicated fabrication process and undesired adsorbates as well as the significantly deteriorated ferromagnetism at atomic layers. Here, the engineering of the antiferromagnetic (AFM) interlayer exchange coupling between atomically thin yet ferromagnetic CrTe_2 layers in an ultra-high vacuum-free 2D magnetic crystal, Cr_5Te_8 is reported. By self-introducing interstitial Cr atoms in the vdW gaps, the emergent AFM ordering and the resultant giant magnetoresistance effect are induced. A large negative magnetoresistance (10) with a plateau-like feature is revealed, which is consistent with the AFM interlayer coupling between the adjacent CrTe_2 main layers in a temperature window of 30 K below the Néel temperature. Notably, the AFM state has a relatively weak interlayer exchange coupling, allowing a switching between the interlayer AFM and ferromagnetic states at moderate magnetic fields. This work represents a new route to engineering low-power devices that underpin the emerging spintronic technologies, and an ideal laboratory to study 2D magnetism.
机译:二维材料研究中最有前途的途径之一是使用二维范德华 (vdW) 磁体合成反铁磁体。然而,它已被证明具有挑战性,部分原因是复杂的制造工艺和不需要的吸附物以及原子层的铁磁性显着恶化。本文报道了超高真空二维磁性晶体中原子薄但铁磁性CrTe_2层之间的反铁磁性(AFM)层间交换耦合工程,Cr_5Te_8。通过在vdW间隙中自引入间隙Cr原子,诱导了涌现的AFM有序效应和由此产生的巨大磁阻效应。揭示了具有平台状特征的大负磁阻(10%),这与相邻CrTe_2主层之间的AFM层间耦合在低于Néel温度30 K的温度窗口内一致。值得注意的是,AFM态具有相对较弱的层间交换耦合,允许在中等磁场下在层间AFM和铁磁态之间切换。这项工作代表了一条设计低功耗器件的新途径,这些器件是新兴自旋电子学技术的基础,也是研究二维磁学的理想实验室。

著录项

  • 来源
    《Advanced functional materials》 |2022年第32期|2202977.1-2202977.8|共8页
  • 作者单位

    Department of Physics and Astronomy University of Missouri Columbia, MO 65211, USA;

    Shenzhen Institute for Quantum Science and Engineering Southern University of Science and Technology Shenzhen 518055, China;

    Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials School of Electronic Science and Engineering Nanjing University Nanjing 210093, ChinaJiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials School of Electronic Science and Engineering Nanjing University Nanjing 210093, China,Shenzhen Institute for Quantum Science and Engineering Southern University of Science andJiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials School of Electronic Science and Engineering Nanjing University Nanjing 210093, China,Department of Electronic Engineering Royal Holloway University of London Egham, Surrey TWNew Energy Technology Engineering Laboratory of Jiangsu Provence & School of Science Nanjing University of Posts and Telecommunications Nanjing 210023, ChinaKey Laboratory of Flexible Electronics & Institute of Advanced Materials Jiangsu National Synergetic Innovation Center for Advanced Materials Nanjing Tech University Nanjing 211816, ChinaDepartment of Physics Missouri University of Science and Technology Missouri 65409, USABeijing National Laboratory of Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Beijing 100190, ChinaDepartment of Electronic Engineering Royal Holloway University of London Egham, Surrey TW20 0EX, UKDepartment of Physics Southern University of Science and Technology Shenzhen 518055, ChinaShenzhen Institute for Quantum Science and Engineering Southern University of Science and Technology Shenzhen 518055, China,Department of Physics Southern University of Science and Technology Shenzhen 518055, China;

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  • 原文格式 PDF
  • 正文语种 英语
  • 中图分类
  • 关键词

    GMR effect; interlayer exchange coupling; self-intercalation; synthetic antiferromagnets; van der Waals magnets;

    机译:GMR效应;层间交换耦合;自插层;合成反铁磁体;范德华磁铁;
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