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机译:Design consideration of ferroelectric field-effect-transistors with metal–ferroelectric–metal capacitor for ternary content addressable memory
Design Enablement Team Samsung Electronics;
School of Electrical Engineering KAIST;
School of Electrical and Electronic Engineering Yonsei UniversityDepartment of Electronics & Information Engineering Korea University;
Compact model; Ferroelectric FET; Logic-in-memory; Non-volatile logic; Non-volatile memory; TCAM;