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Lithography-free synthesis of periodic, vertically-aligned, multi-walled carbon nanotube arrays

机译:周期性、垂直排列、多壁碳纳米管阵列的无光刻合成

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摘要

Until now, the growth of periodic vertically aligned multi-walled carbon nanotube (VA-MWCNT) arrays was dependent on at least one lithography step during fabrication. Here, we demonstrate a lithography-free fabrication method to grow hexagonal arrays of self-standing VA-MWCNTs with tunable pitch and MWCNT size. The MWCNTs are synthesized by plasma enhanced chemical vapor deposition (PECVD) from Ni catalyst particles. Template guided dewetting of a thin Ni film on a hexagonally close-packed silica particle monolayer provides periodically distributed Ni catalyst particles as seeds for the growth of the periodic MWCNT arrays. The diameter of the silica particles directly controls the pitch of the periodic VA-MWCNT arrays from 600 nm to as small as 160 nm. The diameter and length of the individual MWCNTs can also be readily adjusted and are a function of the Ni particle size and PECVD time. This unique method of lithography-free growth of periodic VA-MWCNT arrays can be utilized for the fabrication of large-scale biomimetic materials.
机译:到目前为止,周期性垂直排列多壁碳纳米管(VA-MWCNT)阵列的生长依赖于制造过程中的至少一个光刻步骤。在这里,我们展示了一种无光刻的制造方法,用于生长具有可调间距和MWCNT尺寸的自立式VA-MWCNT的六边形阵列。MWCNTs是通过Ni催化剂颗粒的等离子体增强化学气相沉积(PECVD)合成的。在六边形紧密堆积的二氧化硅颗粒单层上对镍薄膜进行模板引导的去湿,为周期性MWCNT阵列的生长提供了周期性分布的镍催化剂颗粒作为种子。二氧化硅颗粒的直径直接控制周期性VA-MWCNT阵列的间距,从600 nm到小至160 nm。单个MWCNT的直径和长度也可以很容易地调整,并且是Ni粒径和PECVD时间的函数。这种独特的周期性VA-MWCNT阵列的无光刻生长方法可用于制造大规模仿生材料。

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