STUDY OF TEMPERATURE COEFFICIENT OF RESISTANCE OF n-InSb FILMS ON i-GaAs (100) SUBSTRATE AND TEMPERATURE SENSORS BASED ON THEM

摘要

In the present work, explosive thermal evaporation was used to form n-InSb films on i-GaAs (100) substrates. The investigation results of crystal state, microstructure, phase and element composition, and electrical properties of n-InSb films deposited at the substrate temperature of 410-480 degrees C are presented. It is shown that heteroepitaxial n-InSb films form in the deposition temperature of 410 degrees C. At a substrate temperature of 430-440 degrees C, the surface is inhomogeneous; precipitates oriented differently in the substrate plane are clearly observed. At a substrate temperature of 480 degrees C, the phase composition of the film is a superposition of InSb and In phases, and the SEM image of the sample shows that the film is island-like. The resulting n-InSb films at a deposition temperature of 430 degrees C have the highest temperature coefficient of resistance (-1.25 +/- 0.02) %center dot deg(-1). Temperature sensors based on n-InSb-i-GaAs show performance in a wide temperature range (-80 degrees C to +150 degrees C) and at liquid nitrogen temperature and can be used in the space industry and low-temperature electronics, as well as in the automotive and aircraft industries.