Insights in light trapping for new generation silicon solar cell: optical characterization of plasmonic nanostructures beside anti-reflection layer

摘要

Designing light-trapping is one of the requirements for new generation silicon solar cells. Herein, the optical properties of front-based plasmonic nanoparticles besides the anti-reflection layer on new-generation silicon cells were investigated by the 3D-FDTD method. The simulated results were compared with some experimental kinds of literature. In addition to a perfectly periodic structure, the nearly regular structure (closer to the experimental one) was also modeled. Along with the conventional far, near-field effect, generation rate, and ideal Jsc, enhancement in quantum efficiency (g-curve) and integrated quantum efficiency (G-value) were used as suitable characterizing sets. The g-curve result of the sample with the anti-reflection layer showed superiority compared to the standard cell in the similar to full wavelength range. Moreover, the thickness engineering of the anti-reflection layer can significantly increase cell performance (G = 1.4). In contrast, the plasmonic structure was not more effective according to the g-curve of some optimum plasmonic samples for wavelengths below 500 nm. The best G-value among plasmonic samples was 1.3. Also, using both anti-reflection with the plasmonic design did not significantly improve the optical performance. The results determined that the plasmonic system can lead to a considerable decrease in spectral reflectance, consistent with some reported experimental ones. Moreover, the simulations clarified the cause of the lack of necessary plasmonic enhancement in some experimental studies could be attributed to the lateral trap of the light. In other words, this reduction in reflection does not lead to notable transit near and far-field into the active layer.