机译:Stoichiometry and disorder influence over electronic structure in nanostructured VOx films
Univ Cologne, Phys Inst 2, Zulpicher Str 77, D-50937 Cologne, Germany;
CNR, IOM, Lab TASC, Basovizza SS-14,Km 163-5, I-34149 Trieste, Italy;
CNR, ISM, Ist Struttura Mat, Area Ric Tor Vergata, Via Fosso Cavaliere, Rome, ItalyCNR, ISM, Ist Struttura Mat, LD2 Unit, Basovizza Area Sci Pk, I-34149 Trieste, ItalyUniv Nova Gorica, Mat Res Lab, Vipavska 11c, SI-5270 Ajdovscina, SloveniaUniv Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230029, Peoples R ChinaElettra Sincrotrone Trieste, I-34149 Basovizza, ItalySynchrotron SOLEIL, BP 48, F-91192 Gif Sur Yvette, FranceINFN, Lab Nazl Frascati, Via Enrico Fermi 54, Frascati, Italy;
Disordered materials; Nanostructured vanadium oxides; Distorted ligand environment; XANES; VOx;