Highly Efficient Full van der Waals 1D p-Te/2D n-Bi_2O_2Se Heterodiodes with Nanoscale Ultra-Photosensitive Channels

摘要

Continuous miniaturization of semiconductor devices is the key to boostingmodern electronics development. However, this downscaling strategy hasbeen rarely utilized in photoelectronics and photovoltaics. Here, in this work, afull-van der Waals (vdWs) 1D p-Te/2D n-Bi_2O_2Se heterodiode with a rationallydesigned nanoscale ultra-photosensitive channel is reported. Enabled by thedangling bond-free mixed-dimensional vdWs integration, the Te/Bi_2O_2Se type-IIdiodes show a high rectification ratio of 3.6 × 10~4. Operating with 100 mV reversebias or in a self-power mode, the photodiodes demonstrate excellent photodetectionperformances, including high responsivities of 130 A W~(?1) (100 mV bias)and 768.8 mA W~(?1) (self-power mode), surpassing most of the reports of otherheterostructures. More importantly, a superlinear photoelectric conversionphenomenon is uncovered in these nanoscale full-vdWs photodiodes, in whicha model based on the in-gap trap-assisted recombination is proposed for thissuperlinearity. All these results provide valuable insights in light–matter interactionsfor further performance enhancement of photoelectronic devices.