Recent requirements of materials processing by ion beams are now beyond their fundamental limits. Technologies which are much more controllable and versatile on an atomistic scale are needed. Gas cluster ion beam processing which has been developed at Kyoto University is one of the candidates to overcome the present limits. This paper discusses recent requirements in ion beam processing. Possible solutions by cluster ion beam processing are discussed in the following areas: (1) shallow junction formation; (2) high rate etching and atomically smooth surface formation; and (3) high quality thin film deposition. The gas cluster ion beam processing is discussed in comparison with traditional ion beam processing which is presently limited by available atomic and molecular ion beams. (C) 1998 Elsevier Science Ltd. All rights reserved. [References: 30]
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