Diameter-Selective Density Enhancement of Horizontally Aligned Single-Walled Carbon Nanotube Arrays by Temperature-Mediated Method

摘要

High-density single-walled carbon nanotube (SWNT) arrays with specificdiameters are pursued as potential building blocks in future nanoelectronicdevices. The direct growth of SWNT arrays on the single-crystal substrate hasproved offering densely packing high-quality SWNTs. However, further increaseof SWNT density is limited by the deactivation of the catalyst nanoparticlesduring chemical vapor deposition process. Moreover, an increase of array densitywithout any structure control of SWNTs would make the benefit effect verylimited. Here, a temperature-mediated method is proposed to achieve a highdensitySWNT array with a specific diameter via continual growth of SWNTsafter reactivating poisoned catalysts with high carbon capacity and appropriatesize. The density of obtained SWNT array on the quartz substrate is increasedby more than three times, with diameter distribution controlled ≈2 nm. Thisapproach paves the way for the integration of SWNTs into nanodevices.