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首页> 外文期刊>IEEE Transactions on Microwave Theory and Techniques >A 12.3#x2013;18.5-GHz Single-Core Oscillator Using a Dual-Mode Variable Inductor With a Tunable Self-Resonant Frequency Technique
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A 12.3#x2013;18.5-GHz Single-Core Oscillator Using a Dual-Mode Variable Inductor With a Tunable Self-Resonant Frequency Technique

机译:A 12.3#x2013;18.5-GHz Single-Core Oscillator Using a Dual-Mode Variable Inductor With a Tunable Self-Resonant Frequency Technique

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摘要

This article presents a single-core broadband voltage-controlled oscillator (VCO), employing a dual-mode variable inductor (VID). By configuring two independent switched-capacitor arrays embedded into a magnetically coupled LC network with a moderately magnetic coupled coefficient, the frequency tuning range (FTR) is improved by the wide inductance reconfigurable range of the ${X}$ -type mode. Together with 2-bit conventional switched-capacitor banks, the VCO measures an FTR of 40.25% from 12.5 to 18.3 GHz. The low-quality factor ( ${Q}$ ) degradation characteristic of the ${L}$ -type mode is utilized to implement the tuning bands calibration (TBC). After calibration, the tuning voltage can always be calibrated within a small range around the common voltage. The ultimate turning band covers the frequency drift caused by the temperature variation. Designed and fabricated in 65-nm CMOS technology, the measured phase noise after 1/2 division is −114.7 dBc/Hz at 1-MHz offset from the 18.49-GHz carrier frequency. The VCO core exhibits average power dissipation of 9.6 mW from 0.75-V power supply and 0.053 mm2 die area, while the other circuits are powered by a 1.2-V supply.

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