This research disclosure relates to a method of measuring material topography. The measurement method may be used with a (photo)lithography apparatus. The lithography apparatus may be an extreme ultraviolet (EUV) or deep ultraviolet (DUV) lithography apparatus. Photolithography is a process of transferring a pattern to a radiation-sensitive substrate by exposing the substrate to radiation having that pattern. Radiation used in a lithographic apparatus may be deep ultraviolet (DUV) or extreme ultraviolet (EUV). DUV lithographic systems may use radiation with wavelengths of approximately 193 nm or 248 nm. EUV lithographic systems may use radiation with a wavelength of approximately 13.5 nm.
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