The present research disclosure relates to a method for processing a substrate prior to its exposure to radiation in a lithographic apparatus. The present disclosure also relates to a system for processing a substrate, and to a method for manufacturing a device. A lithographic apparatus is a machine constructed to apply a desired pattern onto a substrate. A lithographic apparatus can he used, for example, in the manufacture of devices, for example integrated circuits (ICs). A lithographic apparatus may for example project a pattern from a patterning device (e.g., a mask) onto a layer of radiation-sensitive material (resist) provided on a substrate. The substrate in a lithographic apparatus is typically supported by a support mechanism/substrate holder. When the substrate is a silicon wafer (for example, during integrated circuit manufacture), the support mechanism/substrate hulder is typically referred to as a wafer table. The wavelength of radiation used by a lithographic apparatus to project a pattern onto a substrate determines the minimum size of features that can be formed on that substrate. A lithographic apparatus that uses RUV radiation, that is electromagnetic radiation having a wavelength within the range 4-20 nm, may be used to form smaller features on a substrate than a lithographic apparatus using deep ultraviolet (DUV) radiation (for example with a wavelength of 193 nm).
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