Pure-phase Ga2O3 films were deposited on sapphire substrates by radio frequency magnetron sputtering

摘要

? 2022 Elsevier B.V.Epitaxial Ga2O3 films were successfully grown on sapphire substrates using RF magnetron sputtering method. XRD patterns showed that the films deposited on a-plane substrates were mixed polymorphs, the films on c-plane were pure-phase (2ˉ01) β-Ga2O3, and m-, and r-planes were pure-phase (3 0 0) and (011ˉ2) α-Ga2O3, respectively. AFM and SE were measured to help determine the optimal growth conditions. The optical transmission spectra showed that the prepared Ga2O3 films on different substrate planes have a bandgap of 4.88–5.30 eV.